BFP740FH6327XTSA1 Infineon Discrete Semiconductor Products

The BFP740FH6327XTSA1 from Infineon is an NPN RF bipolar transistor built on high-volume SiGe:C technology, delivering a 42GHz transition frequency and 27.5dB gain for low-noise amplification across 1.8GHz to 6GHz . Achieving a typical noise figure of only 0.5dB at 5.5GHz, it ensures superior signal sensitivity in WLAN 802.11a/b/g/n/ac, GPS/Glonass navigation, satellite radio, and 3G/4G LTE mobile applications . The device also excels as a discrete active mixer or VCO buffer amplifier, with an OIP3 of 24dBm at 5.5GHz for excellent linearity . Housed in a compact 1.4 x 1.2 x 0.55mm TSFP-4 package, it is AEC-Q101 qualified for automotive use and operates up to 150°C with just 160mW dissipation, making it ideal for space-constrained, power-sensitive RF front-end designs In stock at HL Electronics – request a quote for fast delivery.