BFP843H6327XTSA1 Infineon RF

The BFP843H6327XTSA1 is a robust, low-noise NPN RF heterojunction bipolar transistor (HBT) pre-matched for broadband applications. Select this SOT-343 device when your design demands best-in-class noise performance (0.9-1.85dB) across a wide 450MHz to 10GHz frequency range, combined with a high 24.5dB gain and 55mA collector current capability. Its 2.25V collector-emitter voltage and 125mW power dissipation suit low-voltage designs. Key applications: wireless communications (WLAN, WiMAX, Bluetooth), satellite navigation (GPS, GLONASS, BeiDou, Galileo), satellite radio (SDARs, DAB), and telecommunications infrastructure. The -55°C to +150°C range ensures reliability, while the pre-matched input simplifies impedance matching. In stock at HL Electronics – request a quote for fast delivery.

BFP843H6327XTSA1 - Infineon - main product image
Part No.:BFP843H6327XTSA1
Brand:Infineon
Date Code:
Stock:28,167
SPQ:0
MOQ:1+
Delivery Time:In Stock

Pricing (USD)

QuantityUnit Price
1+ $ 0.28
100+ $ 0.23
750+ $ 0.20
1500+ $ 0.19
3000+ $ 0.18
18000+ $ 0.18
39000+ $ 0.18

Technical Specifications

  • Part No.BFP843H6327XTSA1
  • Gain 13.5dB ~ 24.5dB
  • Series -
  • Category Discrete Semiconductor Products > Transistors > Bipolar (BJT) > RF
  • Packaging Tape & Reel (TR)
  • Part Status Active
  • Power - Max 125mW
  • Mounting Type Surface Mount
  • Transistor Type NPN
  • Operating Temperature 150°C (TJ)
  • Frequency - Transition -
  • Supplier Device Package SOT-343
  • Noise Figure (dB Typ @ f) 0.9dB ~ 1.85dB @ 450MHz ~ 10GHz
  • Current - Collector (Ic) (Max) 55mA
  • Collector- Emitter Voltage VCEO Max 2.25V
  • DC Current Gain (hFE) (Min) @ Ic, Vce 150 @ 15mA, 1.8V
📧 📋 💬