BFP843H6327XTSA1 Infineon RF
The BFP843H6327XTSA1 is a robust, low-noise NPN RF heterojunction bipolar transistor (HBT) pre-matched for broadband applications. Select this SOT-343 device when your design demands best-in-class noise performance (0.9-1.85dB) across a wide 450MHz to 10GHz frequency range, combined with a high 24.5dB gain and 55mA collector current capability. Its 2.25V collector-emitter voltage and 125mW power dissipation suit low-voltage designs. Key applications: wireless communications (WLAN, WiMAX, Bluetooth), satellite navigation (GPS, GLONASS, BeiDou, Galileo), satellite radio (SDARs, DAB), and telecommunications infrastructure. The -55°C to +150°C range ensures reliability, while the pre-matched input simplifies impedance matching. In stock at HL Electronics – request a quote for fast delivery.
Pricing (USD)
| Quantity | Unit Price |
|---|---|
| 1+ | $ 0.28 |
| 100+ | $ 0.23 |
| 750+ | $ 0.20 |
| 1500+ | $ 0.19 |
| 3000+ | $ 0.18 |
| 18000+ | $ 0.18 |
| 39000+ | $ 0.18 |
Technical Specifications
- Part No.BFP843H6327XTSA1
- Gain 13.5dB ~ 24.5dB
- Series -
- Category Discrete Semiconductor Products > Transistors > Bipolar (BJT) > RF
- Packaging Tape & Reel (TR)
- Part Status Active
- Power - Max 125mW
- Mounting Type Surface Mount
- Transistor Type NPN
- Operating Temperature 150°C (TJ)
- Frequency - Transition -
- Supplier Device Package SOT-343
- Noise Figure (dB Typ @ f) 0.9dB ~ 1.85dB @ 450MHz ~ 10GHz
- Current - Collector (Ic) (Max) 55mA
- Collector- Emitter Voltage VCEO Max 2.25V
- DC Current Gain (hFE) (Min) @ Ic, Vce 150 @ 15mA, 1.8V
