home icon > Goods Details Page > BSC010NE2LSATMA1

BSC010NE2LSATMA1 Infineon Power MOSFET

BSC010NE2LSATMA1 - Infineon - main product image
Part No.:BSC010NE2LSATMA1
Brand:Infineon
Date Code:
Stock:3,000
SPQ:0
MOQ:1+
Delivery Time:In Stock

Pricing (USD)

QuantityUnit Price
1+ $ 0.91
100+ $ 0.75
1250+ $ 0.70
2500+ $ 0.67
5000+ $ 0.64
30000+ $ 0.64
65000+ $ 0.63

Technical Specifications

  • Part No.BSC010NE2LSATMA1
  • Series OptiMOS™
  • Category Discrete Semiconductor Products > Transistors > FETs, MOSFETs > Single
  • FET Type N-Channel
  • Packaging Tape & Reel (TR)
  • Vgs (Max) ±20V
  • Technology MOSFET (Metal Oxide)
  • FET Feature -
  • Part Status Active
  • Mounting Type Surface Mount
  • Vgs(th) (Max) @ Id 2V @ 250µA
  • Operating Temperature -55°C ~ 150°C (TJ)
  • Rds On (Max) @ Id, Vgs 1 mOhm @ 30A, 10V
  • Power Dissipation (Max) 2.5W (Ta), 96W (Tc)
  • Supplier Device Package PG-TDSON-8
  • Gate Charge (Qg) (Max) @ Vgs 64nC @ 10V
  • Drain to Source Voltage (Vdss) 25V
  • Input Capacitance (Ciss) (Max) @ Vds 4700pF @ 12V
  • Current - Continuous Drain (Id) @ 25°C 39A (Ta), 100A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
📧 📋 💬