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BSC014NE2LSIATMA1 Infineon Power MOSFET

BSC014NE2LSIATMA1 - Infineon - main product image
Part No.:BSC014NE2LSIATMA1
Brand:Infineon
Date Code:
Stock:4,217
SPQ:0
MOQ:1+
Delivery Time:In Stock

Pricing (USD)

QuantityUnit Price
1+ $ 0.70
100+ $ 0.58
1250+ $ 0.54
2500+ $ 0.51
5000+ $ 0.49
30000+ $ 0.49
65000+ $ 0.48

Technical Specifications

  • Part No.BSC014NE2LSIATMA1
  • Series OptiMOS™
  • Category Discrete Semiconductor Products
  • FET Type N-Channel
  • Packaging Tape & Reel (TR)
  • Vgs (Max) ±20V
  • Technology MOSFET (Metal Oxide)
  • FET Feature -
  • Part Status Active
  • Mounting Type Surface Mount
  • Vgs(th) (Max) @ Id 2V @ 250µA
  • Operating Temperature -55°C ~ 150°C (TJ)
  • Rds On (Max) @ Id, Vgs 1.4 mOhm @ 30A, 10V
  • Power Dissipation (Max) 2.5W (Ta), 74W (Tc)
  • Supplier Device Package PG-TDSON-8
  • Gate Charge (Qg) (Max) @ Vgs 39nC @ 10V
  • Drain to Source Voltage (Vdss) 25V
  • Input Capacitance (Ciss) (Max) @ Vds 2700pF @ 12V
  • Current - Continuous Drain (Id) @ 25°C 33A (Ta), 100A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
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