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BSC014NE2LSIATMA1 - Infineon
Partno：BSC014NE2LSIATMA1Encapsulation：
Brand：InfineonParticular Year：
Classification：Packing：
Stock：4217SPQ：0
MOQ：1+Delivery Time：In Stock
Unit Price：
$ 0.695168
Total：
$ 0.7
Order Quantity：
-
+
Other Platform Purchase Links： No Data
- PartNoBSC014NE2LSIATMA1
- Category Discrete Semiconductor Products
- Series OptiMOS™
- Packaging Tape & Reel (TR)
- Part Status Active
- FET Type N-Channel
- Technology MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss) 25V
- Current - Continuous Drain (Id) @ 25°C 33A (Ta), 100A (Tc)
- Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
- Vgs(th) (Max) @ Id 2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs 39nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds 2700pF @ 12V
- Vgs (Max) ±20V
- FET Feature -
- Power Dissipation (Max) 2.5W (Ta), 74W (Tc)
- Rds On (Max) @ Id, Vgs 1.4 mOhm @ 30A, 10V
- Operating Temperature -55°C ~ 150°C (TJ)
- Mounting Type Surface Mount
- Package / Case 8-PowerTDFN