BSC016N06NS Infineon Power MOSFET

The BSC016N06NS is a 60V N-Channel OptiMOS™ 5 MOSFET in a TDSON-8FL package, ideal for high-efficiency synchronous rectification and high-current switching. Select this device when your design demands ultra-low 1.6mΩ Rds(on) at 10V gate drive and 100A continuous drain current. Its 139W power dissipation and 5.2nF input capacitance suit 100-350kHz switching frequencies. It excels in server/telecom power supplies, solar micro-inverters, and DC-DC converters. Target also BLDC motor drives, 48V intermediate bus converters, and UPS systems. The -55°C to +150°C range ensures industrial-grade reliability. Use it where minimizing conduction losses and maximizing power density are critical. In stock at HL Electronics – request a quote for fast delivery.

BSC016N06NS - Infineon - main product image
Part No.:BSC016N06NS
Brand:Infineon
Date Code:
Stock:86,000
SPQ:0
MOQ:1+
Delivery Time:In Stock

Pricing (USD)

QuantityUnit Price
1+ $ 0.58
100+ $ 0.48
1250+ $ 0.44
2500+ $ 0.42
5000+ $ 0.41
30000+ $ 0.40
65000+ $ 0.40

Technical Specifications

  • Part No.BSC016N06NS
  • Category MOSFETs
  • Technology Si
  • Mounting Style SMD/SMT
  • Transistor Polarity N-Channel
  • Number of Channels 1 Channel
  • Vds - Drain-Source Breakdown Voltage 60 V
  • Id - Continuous Drain Current 100 A
  • Rds On - Drain-Source Resistance 1.6 mOhms
  • Vgs - Gate-Source Voltage -20 V, 20 V
  • Vgs th - Gate-Source Threshold Voltage 2.1 V
  • Qg - Gate Charge 71 nC
  • Operating Temperature -55°C ~ 150°C
  • Pd - Power Dissipation 139 W
  • Supplier Device Package TDSON-8
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