BSC016N06NS Infineon Power MOSFET
The BSC016N06NS is a 60V N-Channel OptiMOS™ 5 MOSFET in a TDSON-8FL package, ideal for high-efficiency synchronous rectification and high-current switching. Select this device when your design demands ultra-low 1.6mΩ Rds(on) at 10V gate drive and 100A continuous drain current. Its 139W power dissipation and 5.2nF input capacitance suit 100-350kHz switching frequencies. It excels in server/telecom power supplies, solar micro-inverters, and DC-DC converters. Target also BLDC motor drives, 48V intermediate bus converters, and UPS systems. The -55°C to +150°C range ensures industrial-grade reliability. Use it where minimizing conduction losses and maximizing power density are critical. In stock at HL Electronics – request a quote for fast delivery.
Pricing (USD)
| Quantity | Unit Price |
|---|---|
| 1+ | $ 0.58 |
| 100+ | $ 0.48 |
| 1250+ | $ 0.44 |
| 2500+ | $ 0.42 |
| 5000+ | $ 0.41 |
| 30000+ | $ 0.40 |
| 65000+ | $ 0.40 |
Technical Specifications
- Part No.BSC016N06NS
- Category MOSFETs
- Technology Si
- Mounting Style SMD/SMT
- Transistor Polarity N-Channel
- Number of Channels 1 Channel
- Vds - Drain-Source Breakdown Voltage 60 V
- Id - Continuous Drain Current 100 A
- Rds On - Drain-Source Resistance 1.6 mOhms
- Vgs - Gate-Source Voltage -20 V, 20 V
- Vgs th - Gate-Source Threshold Voltage 2.1 V
- Qg - Gate Charge 71 nC
- Operating Temperature -55°C ~ 150°C
- Pd - Power Dissipation 139 W
- Supplier Device Package TDSON-8
