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BSC016N06NSATMA1 Infineon Power MOSFET
The BSC016N06NSATMA1 is a 60V N-Channel OptiMOS™ power MOSFET in a compact PG-TDSON-8 package, ideal for high-efficiency synchronous rectification and high-speed switching. Select this device when your design demands ultra-low 1.6mΩ Rds(on) and 100A drain current capability. Optimized for 10V gate drive, it excels in 48V DC-DC converters, solar microinverters, telecom brick converters, and BLDC motor drives. The 71nC gate charge and 5200pF input capacitance enable efficient operation at 100-500kHz switching frequencies. Its -55°C to +150°C junction range suits industrial automation and server power supplies. Use it for OR-ing, eFuse, or battery protection where minimizing conduction and switching losses is critical. In stock at HL Electronics – request a quote for fast delivery.
Pricing (USD)
| Quantity | Unit Price |
|---|---|
| 1+ | $ 0.65 |
| 100+ | $ 0.54 |
| 1250+ | $ 0.50 |
| 2500+ | $ 0.48 |
| 5000+ | $ 0.46 |
Technical Specifications
- Part No.BSC016N06NSATMA1
- Series OptiMOS™
- Category Discrete Semiconductor Products > Transistors > FETs, MOSFETs > Single
- FET Type N-Channel
- Packaging Tape & Reel (TR)
- Vgs (Max) ±20V
- Technology MOSFET (Metal Oxide)
- FET Feature -
- Part Status Active
- Mounting Type Surface Mount
- Vgs(th) (Max) @ Id 2.8V @ 95µA
- Operating Temperature -55°C ~ 150°C (TJ)
- Rds On (Max) @ Id, Vgs 1.6 mOhm @ 50A, 10V
- Power Dissipation (Max) 2.5W (Ta), 139W (Tc)
- Supplier Device Package PG-TDSON-8
- Gate Charge (Qg) (Max) @ Vgs 71nC @ 10V
- Drain to Source Voltage (Vdss) 60V
- Input Capacitance (Ciss) (Max) @ Vds 5200pF @ 30V
- Current - Continuous Drain (Id) @ 25°C 30A (Ta), 100A (Tc)
- Drive Voltage (Max Rds On, Min Rds On) 6V, 10V