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BSC030N08NS5ATMA1 Infineon Power MOSFET
The BSC030N08NS5ATMA1 from Infineon is an N-channel OptiMOS 5 power MOSFET built for high-efficiency synchronous rectification in demanding switched-mode power supplies. For selection, it features 80V drain-source voltage, 100A continuous drain current, and an ultra-low 3mΩ on‑resistance at 10V. The 76nC gate charge and 5600pF input capacitance help minimize switching losses, while robust 139W (Tc) dissipation and a -55°C to +150°C junction range support thermally demanding environments. In application, it is specifically designed for synchronous rectification in telecom and server power supplies. It is also well‑suited for DC‑DC converters, motor drives, industrial automation, renewable energy systems such as solar inverters, adapters, and 48V intermediate bus converters where maximum efficiency and power density are critical. In stock at HL Electronics – request a quote for fast delivery.
Pricing (USD)
| Quantity | Unit Price |
|---|---|
| 1+ | $ 0.98 |
| 100+ | $ 0.82 |
| 1250+ | $ 0.76 |
| 2500+ | $ 0.72 |
| 5000+ | $ 0.70 |
Technical Specifications
- Part No.BSC030N08NS5ATMA1
- Series OptiMOS™
- Category Discrete Semiconductor Products > Transistors > FETs, MOSFETs > Single
- FET Type N-Channel
- Packaging Tape & Reel (TR)
- Vgs (Max) ±20V
- Technology MOSFET (Metal Oxide)
- FET Feature -
- Part Status Active
- Mounting Type Surface Mount
- Vgs(th) (Max) @ Id 3.8V @ 95µA
- Operating Temperature -55°C ~ 150°C (TJ)
- Rds On (Max) @ Id, Vgs 3 mOhm @ 50A, 10V
- Power Dissipation (Max) 2.5W (Ta), 139W (Tc)
- Supplier Device Package PG-TDSON-8
- Gate Charge (Qg) (Max) @ Vgs 76nC @ 10V
- Drain to Source Voltage (Vdss) 80V
- Input Capacitance (Ciss) (Max) @ Vds 5600pF @ 40V
- Current - Continuous Drain (Id) @ 25°C 100A (Tc)
- Drive Voltage (Max Rds On, Min Rds On) 6V, 10V