> Goods Details Page
> BSC066N06NS
BSC066N06NS Infineon Power MOSFET
The BSC066N06NS from Infineon is an OptiMOS™ 5 N‑channel power MOSFET, 60 V 64 A, in an 8‑pin TDSON package, optimized for synchronous rectification in SMPS for servers, desktops and tablet chargers【6†L30-L32】. For selection, its low 6.6 mΩ RDS(on) at 10 V minimizes conduction losses while a low gate charge of 21 nC and 1500 pF input capacitance ease driver design. The 3.3 V threshold and 4.5 V gate drive enable logic‑level operation. In application, it excels in motor control for 12–48 V systems, solar micro inverters, isolated DC‑DC converters, fast‑switching DC‑DC bricks, Or‑ing switches, and battery protection circuits. In stock at HL Electronics – request a quote for fast delivery.
Pricing (USD)
| Quantity | Unit Price |
|---|---|
| 1+ | $ 0.58 |
| 100+ | $ 0.48 |
| 1250+ | $ 0.45 |
| 2500+ | $ 0.42 |
| 5000+ | $ 0.41 |
| 30000+ | $ 0.41 |
| 65000+ | $ 0.40 |
Technical Specifications
- Part No.BSC066N06NS
- Series OptiMOS™ 5
- Category Discrete Semiconductor Products > Transistors > MOSFETs
- FET Type N-Channel
- Packaging Tape & Reel (TR)
- Vgs (Max) ±20V
- Technology MOSFET (Metal Oxide)
- Part Status Active
- Manufacturer Infineon Technologies
- Mounting Type Surface Mount
- Vgs(th) (Max) @ Id 3.3V @ 20µA
- Base Product Number BSC066N06
- Operating Temperature -55°C ~ 150°C (TJ)
- Rds On (Max) @ Id, Vgs 6.6mOhm @ 50A, 10V
- Power Dissipation (Max) 46W (Tc)
- Supplier Device Package PG-TDSON-8
- Gate Charge (Qg) (Max) @ Vgs 21 nC @ 10 V
- Drain to Source Voltage (Vdss) 60 V
- Input Capacitance (Ciss) (Max) @ Vds 1500 pF @ 30 V
- Drive Voltage (Max Rds On, Min Rds On) 10V
- Current - Continuous Drain (Id) @ 25°C 64A (Tc)