home icon > Goods Details Page > BSC0901NSATMA1

BSC0901NSATMA1 Infineon Power MOSFET

BSC0901NSATMA1 - Infineon - main product image
Part No.:BSC0901NSATMA1
Brand:Infineon
Date Code:
Stock:3,000
SPQ:0
MOQ:1+
Delivery Time:In Stock

Pricing (USD)

QuantityUnit Price
1+ $ 0.25
100+ $ 0.20
1250+ $ 0.18
2500+ $ 0.17
5000+ $ 0.16

Technical Specifications

  • Part No.BSC0901NSATMA1
  • Category Discrete Semiconductor Products
  • Series OptiMOS™
  • Packaging Tape & Reel (TR)
  • Part Status Active
  • FET Type N-Channel
  • Technology MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss) 30V
  • Current - Continuous Drain (Id) @ 25°C 28A (Ta), 100A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
  • Vgs(th) (Max) @ Id 2.2V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs 44nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds 2800pF @ 15V
  • Vgs (Max) ±20V
  • FET Feature -
  • Power Dissipation (Max) 2.5W (Ta), 69W (Tc)
  • Rds On (Max) @ Id, Vgs 1.9 mOhm @ 30A, 10V
  • Operating Temperature -55°C ~ 150°C (TJ)
  • Mounting Type Surface Mount
  • Supplier Device Package PG-TDSON-8
📧 📋 💬