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BSC196N10NSGATMA1 Infineon Power MOSFET

BSC196N10NSGATMA1 - Infineon - main product image
Part No.:BSC196N10NSGATMA1
Brand:Infineon
Date Code:
Stock:5,009
SPQ:0
MOQ:1+
Delivery Time:In Stock

Pricing (USD)

QuantityUnit Price
1+ $ 0.55
100+ $ 0.46
1250+ $ 0.42
2500+ $ 0.40
5000+ $ 0.39
30000+ $ 0.38
65000+ $ 0.38

Technical Specifications

  • Part No.BSC196N10NSGATMA1
  • Series OptiMOS™
  • Category Discrete Semiconductor Products
  • FET Type N-Channel
  • Packaging Tape & Reel (TR)
  • Vgs (Max) ±20V
  • Technology MOSFET (Metal Oxide)
  • FET Feature -
  • Part Status Active
  • Mounting Type Surface Mount
  • Vgs(th) (Max) @ Id 4V @ 42µA
  • Operating Temperature -55°C ~ 150°C (TJ)
  • Rds On (Max) @ Id, Vgs 19.6 mOhm @ 45A, 10V
  • Power Dissipation (Max) 78W (Tc)
  • Supplier Device Package PG-TDSON-8
  • Gate Charge (Qg) (Max) @ Vgs 34nC @ 10V
  • Drain to Source Voltage (Vdss) 100V
  • Input Capacitance (Ciss) (Max) @ Vds 2300pF @ 50V
  • Current - Continuous Drain (Id) @ 25°C 8.5A (Ta), 45A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On) 10V
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