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BSC196N10NSGATMA1 - Infineon
Partno：BSC196N10NSGATMA1Encapsulation：
Brand：InfineonParticular Year：
Classification：Packing：
Stock：5009SPQ：0
MOQ：1+Delivery Time：In Stock
Unit Price：
$ 0.550089
Total：
$ 0.55
Order Quantity：
-
+
Other Platform Purchase Links： No Data
- PartNoBSC196N10NSGATMA1
- Category Discrete Semiconductor Products
- Series OptiMOS™
- Packaging Tape & Reel (TR)
- Part Status Active
- FET Type N-Channel
- Technology MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss) 100V
- Current - Continuous Drain (Id) @ 25°C 8.5A (Ta), 45A (Tc)
- Drive Voltage (Max Rds On, Min Rds On) 10V
- Vgs(th) (Max) @ Id 4V @ 42µA
- Gate Charge (Qg) (Max) @ Vgs 34nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds 2300pF @ 50V
- Vgs (Max) ±20V
- FET Feature -
- Power Dissipation (Max) 78W (Tc)
- Rds On (Max) @ Id, Vgs 19.6 mOhm @ 45A, 10V
- Operating Temperature -55°C ~ 150°C (TJ)
- Mounting Type Surface Mount
- Package / Case 8-PowerTDFN