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BSP129H6327XTSA1 Infineon Power MOSFET

BSP129H6327XTSA1 - Infineon - main product image
Part No.:BSP129H6327XTSA1
Brand:Infineon
Date Code:
Stock:3,000
SPQ:0
MOQ:1+
Delivery Time:In Stock

Pricing (USD)

QuantityUnit Price
1+ $ 0.25
50+ $ 0.20
1000+ $ 0.18
20000+ $ 0.18
30000+ $ 0.18

Technical Specifications

  • Part No.BSP129H6327XTSA1
  • Series SIPMOS®
  • Category Discrete Semiconductor Products > Transistors > FETs, MOSFETs > Single
  • FET Type N-Channel
  • Packaging Tape & Reel (TR)
  • Vgs (Max) ±20V
  • Technology MOSFET (Metal Oxide)
  • FET Feature Depletion Mode
  • Part Status Active
  • Mounting Type Surface Mount
  • Vgs(th) (Max) @ Id 1V @ 108µA
  • Operating Temperature -55°C ~ 150°C (TJ)
  • Rds On (Max) @ Id, Vgs 6 Ohm @ 350mA, 10V
  • Power Dissipation (Max) 1.8W (Ta)
  • Supplier Device Package PG-SOT223-4
  • Gate Charge (Qg) (Max) @ Vgs 5.7nC @ 5V
  • Drain to Source Voltage (Vdss) 240V
  • Input Capacitance (Ciss) (Max) @ Vds 108pF @ 25V
  • Current - Continuous Drain (Id) @ 25°C 350mA (Ta)
  • Drive Voltage (Max Rds On, Min Rds On) 0V, 10V
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