BSP318SH6327XTSA1 Infineon Power MOSFET
The BSP318SH6327XTSA1 from Infineon is an N-channel SIPMOS® small-signal MOSFET engineered for efficient low-voltage switching. For selection, its key advantage is a logic-level gate threshold of just 2V, allowing direct drive from microcontrollers and 3.3V/5V logic without level shifters. The 60V breakdown voltage and 2.6A continuous drain current suit a wide range of medium-voltage applications, while the low 90mΩ on-resistance at 10V minimizes conduction losses. Its 380pF input capacitance and 20nC gate charge enable fast switching at moderate frequencies. The SOT-223 surface-mount package provides 1.8W power dissipation in a compact footprint. In application, it excels as a load switch in industrial sensors and PLC modules, relay replacement in automotive body electronics, and DC-DC converter switching in networking equipment. It's also ideal for LED lighting drivers, battery protection circuits in portable devices, and motor control in small automation systems where logic-level drive and surface-mount assembly are essential. In stock at HL Electronics – request a quote for fast delivery.
Pricing (USD)
| Quantity | Unit Price |
|---|---|
| 1+ | $ 0.42 |
| 50+ | $ 0.32 |
| 1000+ | $ 0.30 |
Technical Specifications
- Part No.BSP318SH6327XTSA1
- Series SIPMOS®
- Category Discrete Semiconductor Products > Transistors > FETs, MOSFETs > Single
- FET Type N-Channel
- Packaging Tape & Reel (TR)
- Vgs (Max) ±20V
- Technology MOSFET (Metal Oxide)
- FET Feature -
- Part Status Active
- Mounting Type Surface Mount
- Vgs(th) (Max) @ Id 2V @ 20µA
- Operating Temperature -55°C ~ 150°C (TJ)
- Rds On (Max) @ Id, Vgs 90 mOhm @ 2.6A, 10V
- Power Dissipation (Max) 1.8W (Ta)
- Supplier Device Package PG-SOT223-4
- Gate Charge (Qg) (Max) @ Vgs 20nC @ 10V
- Drain to Source Voltage (Vdss) 60V
- Input Capacitance (Ciss) (Max) @ Vds 380pF @ 25V
- Current - Continuous Drain (Id) @ 25°C 2.6A (Tj)
- Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
