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BSP89H6327XTSA1 Infineon Power MOSFET

BSP89H6327XTSA1 - Infineon - main product image
Part No.:BSP89H6327XTSA1
Brand:Infineon
Date Code:
Stock:14,001
SPQ:0
MOQ:1+
Delivery Time:In Stock

Pricing (USD)

QuantityUnit Price
1+ $ 0.20
50+ $ 0.15
1000+ $ 0.14
20000+ $ 0.14
30000+ $ 0.14

Technical Specifications

  • PartNoBSP89H6327XTSA1
  • Category Discrete Semiconductor Products
  • Series SIPMOS®
  • Packaging Tape & Reel (TR)
  • Part Status Active
  • FET Type N-Channel
  • Technology MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss) 240V
  • Current - Continuous Drain (Id) @ 25°C 350mA (Ta)
  • Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
  • Vgs(th) (Max) @ Id 1.8V @ 108µA
  • Gate Charge (Qg) (Max) @ Vgs 6.4nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds 140pF @ 25V
  • Vgs (Max) ±20V
  • FET Feature -
  • Power Dissipation (Max) 1.8W (Ta)
  • Rds On (Max) @ Id, Vgs 6 Ohm @ 350mA, 10V
  • Operating Temperature -55°C ~ 150°C (TJ)
  • Mounting Type Surface Mount
  • Supplier Device Package PG-SOT223-4
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