> Goods Details Page > BSP89H6327XTSA1

Partno：BSP89H6327XTSA1Encapsulation：

Brand：InfineonParticular Year：

Classification：Packing：

Stock：14001SPQ：0

MOQ：1+Delivery Time：In Stock

Unit Price： $ 0.196461
Total： $ 0.2
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  • PartNoBSP89H6327XTSA1
  • Category Discrete Semiconductor Products
  • Series SIPMOS®
  • Packaging Tape & Reel (TR)
  • Part Status Active
  • FET Type N-Channel
  • Technology MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss) 240V
  • Current - Continuous Drain (Id) @ 25°C 350mA (Ta)
  • Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
  • Vgs(th) (Max) @ Id 1.8V @ 108µA
  • Gate Charge (Qg) (Max) @ Vgs 6.4nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds 140pF @ 25V
  • Vgs (Max) ±20V
  • FET Feature -
  • Power Dissipation (Max) 1.8W (Ta)
  • Rds On (Max) @ Id, Vgs 6 Ohm @ 350mA, 10V
  • Operating Temperature -55°C ~ 150°C (TJ)
  • Mounting Type Surface Mount
  • Package / Case TO-261-4, TO-261AA