BSR92PH6327XTSA1 Infineon Power MOSFET

The BSR92PH6327XTSA1 from Infineon is a high-voltage P-channel SIPMOS® MOSFET designed for small-signal switching applications. For selection, its key advantage is a 250V drain-source breakdown voltage combined with logic-level drive capability, turning on with just 1V threshold and achieving full enhancement at 2.8V gate drive. The 140mA continuous current rating and 11Ω on-resistance suit low-power high-voltage circuits. Low gate charge of 4.8nC and input capacitance of 109pF enable fast, efficient switching with minimal drive requirements. In application, it excels as a high-side load switch in telecom power supplies, level shifters in industrial controls, and relay replacement in smart meters. Its P-channel nature simplifies high-side drive circuitry, while the compact PG-SC-59 package and wide -55°C to +150°C junction temperature range make it ideal for space-constrained, high-reliability designs such as battery management systems and sensor interface circuits. In stock at HL Electronics – request a quote for fast delivery.