IDH04G65C6XKSA1 Infineon Single

The IDH04G65C6XKSA1 from Infineon is a 650V silicon carbide Schottky diode belonging to the CoolSiC™ 6th generation family. For selection, its key advantages are zero reverse recovery charge and true no-recovery-time switching, virtually eliminating switching losses in high-frequency designs. The 12A continuous forward current rating and 1.35V forward voltage at 4A ensure high efficiency, while the robust -55°C to +175°C junction temperature suits harsh environments. The low 205pF capacitance enhances performance in resonant topologies. In application, it excels as a boost diode in solar inverters and EV charging stations, an output rectifier in server and telecom power supplies, and a freewheeling diode in industrial motor drives. Its TO-220-2 through-hole package simplifies prototyping and thermal management, making it ideal for high-power density designs demanding uncompromised reliability and best-in-class efficiency. In stock at HL Electronics – request a quote for fast delivery.