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IPA60R360P7S Infineon Power MOSFET
The IPA60R360P7S is a 600V/650V CoolMOS™ P7 N-channel superjunction MOSFET designed for high efficiency and ease of use . With 360mΩ max on-resistance, 9A continuous drain current, and 13nC gate charge, it significantly reduces switching and conduction losses . Its integrated gate resistor and robust body diode with >2kV ESD protection simplify design and enhance reliability . Rated for 22W dissipation in a TO-220FP package, it suits PFC stages, LLC resonant converters, TV power supplies, server/telecom SMPS, and LED lighting drivers . Select this MOSFET when you need a cost-effective, easy-to-use solution that balances performance and ruggedness across consumer and industrial applications. In stock at HL Electronics – request a quote for fast delivery.
Pricing (USD)
| Quantity | Unit Price |
|---|---|
| 1+ | $ 0.46 |
| 50+ | $ 0.37 |
| 500+ | $ 0.34 |
| 10000+ | $ 0.34 |
| 15000+ | $ 0.34 |
Technical Specifications
- Part No.IPA60R360P7S
- Category Discrete > Transistors > MOSFETs
- Manufacturer Infineon Technologies
- Series CoolMOS™ P7
- Packaging Tube
- Part Status Active
- FET Type N-Channel
- Technology MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss) 600V
- Current - Continuous Drain (Id) @ 25°C 9A
- Drive Voltage (Max Rds On, Min Rds On) 10V
- Rds On (Max) @ Id, Vgs 360mOhm @ 2.7A, 10V
- Vgs(th) (Max) @ Id 3.5V @ 270µA
- Gate Charge (Qg) (Max) @ Vgs 13nC @ 10V
- Vgs (Max) ±20V
- Input Capacitance (Ciss) (Max) @ Vds 555pF @ 400V
- Reverse Transfer Capacitance (Crss) 214pF
- Power Dissipation (Max) 22W
- Operating Temperature -40°C ~ 150°C (TJ)
- Mounting Type Through Hole
- Supplier Device Package PG-TO220-FP