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IPB031N08N5ATMA1 Infineon Power MOSFET

IPB031N08N5ATMA1 - Infineon - main product image
Part No.:IPB031N08N5ATMA1
Brand:Infineon
Date Code:
Stock:3,000
SPQ:0
MOQ:1+
Delivery Time:In Stock

Pricing (USD)

QuantityUnit Price
1+ $ 1.53
100+ $ 1.30
1000+ $ 1.26
15000+ $ 1.25
30000+ $ 1.24

Technical Specifications

  • Part No.IPB031N08N5ATMA1
  • Series OptiMOS™
  • Category Discrete Semiconductor Products
  • FET Type N-Channel
  • Packaging Tape & Reel (TR)
  • Vgs (Max) ±20V
  • Technology MOSFET (Metal Oxide)
  • FET Feature -
  • Part Status Active
  • Mounting Type Surface Mount
  • Vgs(th) (Max) @ Id 3.8V @ 108µA
  • Operating Temperature -55°C ~ 175°C (TJ)
  • Rds On (Max) @ Id, Vgs 3.1 mOhm @ 100A, 10V
  • Power Dissipation (Max) 167W (Tc)
  • Supplier Device Package PG-TO263-3
  • Gate Charge (Qg) (Max) @ Vgs 87nC @ 10V
  • Drain to Source Voltage (Vdss) 80V
  • Input Capacitance (Ciss) (Max) @ Vds 6240pF @ 40V
  • Current - Continuous Drain (Id) @ 25°C 120A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On) 6V, 10V
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