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IPB031N08N5ATMA1 - Infineon
Partno：IPB031N08N5ATMA1Encapsulation：
Brand：InfineonParticular Year：
Classification：Packing：
Stock：3000SPQ：0
MOQ：1+Delivery Time：In Stock
Unit Price：
$ 1.533903
Total：
$ 1.53
Order Quantity：
-
+
Other Platform Purchase Links： No Data
- PartNoIPB031N08N5ATMA1
- Category Discrete Semiconductor Products
- Series OptiMOS™
- Packaging Tape & Reel (TR)
- Part Status Active
- FET Type N-Channel
- Technology MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss) 80V
- Current - Continuous Drain (Id) @ 25°C 120A (Tc)
- Drive Voltage (Max Rds On, Min Rds On) 6V, 10V
- Vgs(th) (Max) @ Id 3.8V @ 108µA
- Gate Charge (Qg) (Max) @ Vgs 87nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds 6240pF @ 40V
- Vgs (Max) ±20V
- FET Feature -
- Power Dissipation (Max) 167W (Tc)
- Rds On (Max) @ Id, Vgs 3.1 mOhm @ 100A, 10V
- Operating Temperature -55°C ~ 175°C (TJ)
- Mounting Type Surface Mount
- Package / Case TO-263-3, D2Pak (2 Leads + Tab), TO-263AB