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IPD200N15N3GATMA1 - Infineon
Partno：IPD200N15N3GATMA1Encapsulation：
Brand：InfineonParticular Year：
Classification：Packing：
Stock：4907SPQ：0
MOQ：1+Delivery Time：In Stock
Unit Price：
$ 1.130404
Total：
$ 1.13
Order Quantity：
-
+
Other Platform Purchase Links： No Data
- PartNoIPD200N15N3GATMA1
- Category Discrete Semiconductor Products
- Series OptiMOS™
- Packaging Tape & Reel (TR)
- Part Status Active
- FET Type N-Channel
- Technology MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss) 150V
- Current - Continuous Drain (Id) @ 25°C 50A (Tc)
- Drive Voltage (Max Rds On, Min Rds On) 8V, 10V
- Vgs(th) (Max) @ Id 4V @ 90µA
- Gate Charge (Qg) (Max) @ Vgs 31nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds 1820pF @ 75V
- Vgs (Max) ±20V
- FET Feature -
- Power Dissipation (Max) 150W (Tc)
- Rds On (Max) @ Id, Vgs 20 mOhm @ 50A, 10V
- Operating Temperature -55°C ~ 175°C (TJ)
- Mounting Type Surface Mount
- Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63