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IPD200N15N3GATMA1 Infineon Power MOSFET

IPD200N15N3GATMA1 - Infineon - main product image
Part No.:IPD200N15N3GATMA1
Brand:Infineon
Date Code:
Stock:4,907
SPQ:0
MOQ:1+
Delivery Time:In Stock

Pricing (USD)

QuantityUnit Price
1+ $ 1.13
100+ $ 0.97
1250+ $ 0.93
2500+ $ 0.90
37500+ $ 0.89
50000+ $ 0.88

Technical Specifications

  • Part No.IPD200N15N3GATMA1
  • Series OptiMOS™
  • Category Discrete Semiconductor Products
  • FET Type N-Channel
  • Packaging Tape & Reel (TR)
  • Vgs (Max) ±20V
  • Technology MOSFET (Metal Oxide)
  • FET Feature -
  • Part Status Active
  • Mounting Type Surface Mount
  • Vgs(th) (Max) @ Id 4V @ 90µA
  • Operating Temperature -55°C ~ 175°C (TJ)
  • Rds On (Max) @ Id, Vgs 20 mOhm @ 50A, 10V
  • Power Dissipation (Max) 150W (Tc)
  • Supplier Device Package PG-TO252-3
  • Gate Charge (Qg) (Max) @ Vgs 31nC @ 10V
  • Drain to Source Voltage (Vdss) 150V
  • Input Capacitance (Ciss) (Max) @ Vds 1820pF @ 75V
  • Current - Continuous Drain (Id) @ 25°C 50A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On) 8V, 10V
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