IPD50R3K0CEAUMA1 Infineon Power MOSFET
The IPD50R3K0CEAUMA1 from Infineon is a 500V CoolMOS™ CE N-channel superjunction MOSFET engineered for cost-sensitive, high-efficiency power conversion. For selection, its key advantage is a 500V blocking voltage paired with a 1.7A drain current and a maximum 3Ω on-resistance at 13V, suitable for low-power offline designs. The ultra-low 84pF input capacitance and 4.3nC total gate charge minimize switching losses and driver burden. Its fast-switching superjunction technology and integrated body diode enhance performance, while a -55°C to +150°C temperature range ensures reliability. In application, it excels in low-power switch-mode power supplies (SMPS), LED lighting drivers, auxiliary power stages in consumer electronics, and motor control for industrial automation and robotics. The D-Pak (TO-252) surface-mount package enables compact designs suited for adapters, small appliances, and space-constrained lighting systems. In stock at HL Electronics – request a quote for fast delivery.
Pricing (USD)
| Quantity | Unit Price |
|---|---|
| 1+ | $ 0.25 |
| 100+ | $ 0.19 |
| 1250+ | $ 0.17 |
| 2500+ | $ 0.16 |
| 37500+ | $ 0.16 |
| 50000+ | $ 0.16 |
Technical Specifications
- Part No.IPD50R3K0CEAUMA1
- Series CoolMOS™ CE
- Category Discrete Semiconductor Products
- FET Type N-Channel
- Packaging Tape & Reel (TR)
- Vgs (Max) ±20V
- Technology MOSFET (Metal Oxide)
- FET Feature -
- Part Status Active
- Mounting Type Surface Mount
- Vgs(th) (Max) @ Id 3.5V @ 30µA
- Operating Temperature -55°C ~ 150°C (TJ)
- Rds On (Max) @ Id, Vgs 3 Ohm @ 400mA, 13V
- Power Dissipation (Max) 26W (Tc)
- Supplier Device Package PG-TO252-3
- Gate Charge (Qg) (Max) @ Vgs 4.3nC @ 10V
- Drain to Source Voltage (Vdss) 500V
- Input Capacitance (Ciss) (Max) @ Vds 84pF @ 100V
- Current - Continuous Drain (Id) @ 25°C 1.7A (Tc)
- Drive Voltage (Max Rds On, Min Rds On) 13V
