IPD50R3K0CEAUMA1 Infineon Power MOSFET

The IPD50R3K0CEAUMA1 from Infineon is a 500V CoolMOS™ CE N-channel superjunction MOSFET engineered for cost-sensitive, high-efficiency power conversion. For selection, its key advantage is a 500V blocking voltage paired with a 1.7A drain current and a maximum 3Ω on-resistance at 13V, suitable for low-power offline designs. The ultra-low 84pF input capacitance and 4.3nC total gate charge minimize switching losses and driver burden. Its fast-switching superjunction technology and integrated body diode enhance performance, while a -55°C to +150°C temperature range ensures reliability. In application, it excels in low-power switch-mode power supplies (SMPS), LED lighting drivers, auxiliary power stages in consumer electronics, and motor control for industrial automation and robotics. The D-Pak (TO-252) surface-mount package enables compact designs suited for adapters, small appliances, and space-constrained lighting systems. In stock at HL Electronics – request a quote for fast delivery.

IPD50R3K0CEAUMA1 - Infineon - main product image
Part No.:IPD50R3K0CEAUMA1
Brand:Infineon
Date Code:
Stock:14,986
SPQ:0
MOQ:1+
Delivery Time:In Stock

Pricing (USD)

QuantityUnit Price
1+ $ 0.25
100+ $ 0.19
1250+ $ 0.17
2500+ $ 0.16
37500+ $ 0.16
50000+ $ 0.16

Technical Specifications

  • Part No.IPD50R3K0CEAUMA1
  • Series CoolMOS™ CE
  • Category Discrete Semiconductor Products
  • FET Type N-Channel
  • Packaging Tape & Reel (TR)
  • Vgs (Max) ±20V
  • Technology MOSFET (Metal Oxide)
  • FET Feature -
  • Part Status Active
  • Mounting Type Surface Mount
  • Vgs(th) (Max) @ Id 3.5V @ 30µA
  • Operating Temperature -55°C ~ 150°C (TJ)
  • Rds On (Max) @ Id, Vgs 3 Ohm @ 400mA, 13V
  • Power Dissipation (Max) 26W (Tc)
  • Supplier Device Package PG-TO252-3
  • Gate Charge (Qg) (Max) @ Vgs 4.3nC @ 10V
  • Drain to Source Voltage (Vdss) 500V
  • Input Capacitance (Ciss) (Max) @ Vds 84pF @ 100V
  • Current - Continuous Drain (Id) @ 25°C 1.7A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On) 13V
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