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IPD80R1K0CEATMA1 Infineon Power MOSFET

IPD80R1K0CEATMA1 - Infineon - main product image
Part No.:IPD80R1K0CEATMA1
Brand:Infineon
Date Code:
Stock:3,000
SPQ:0
MOQ:1+
Delivery Time:In Stock

Pricing (USD)

QuantityUnit Price
1+ $ 0.50
100+ $ 0.42
1250+ $ 0.38
2500+ $ 0.36

Technical Specifications

  • Part No.IPD80R1K0CEATMA1
  • Series CoolMOS™ CE
  • Category Discrete Semiconductor Products > Transistors > FETs, MOSFETs > Single
  • FET Type N-Channel
  • Packaging Tape & Reel (TR)
  • Vgs (Max) ±20V
  • Technology MOSFET (Metal Oxide)
  • FET Feature -
  • Part Status Active
  • Mounting Type Surface Mount
  • Vgs(th) (Max) @ Id 3.9V @ 250µA
  • Operating Temperature -55°C ~ 150°C (TJ)
  • Rds On (Max) @ Id, Vgs 950 mOhm @ 3.6A, 10V
  • Power Dissipation (Max) 83W (Tc)
  • Supplier Device Package PG-TO252-3
  • Gate Charge (Qg) (Max) @ Vgs 31nC @ 10V
  • Drain to Source Voltage (Vdss) 800V
  • Input Capacitance (Ciss) (Max) @ Vds 785pF @ 100V
  • Current - Continuous Drain (Id) @ 25°C 5.7A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On) 10V
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