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IPD80R4K5P7ATMA1 Infineon Power MOSFET

IPD80R4K5P7ATMA1 - Infineon - main product image
Part No.:IPD80R4K5P7ATMA1
Brand:Infineon
Date Code:
Stock:5,900
SPQ:0
MOQ:1+
Delivery Time:In Stock

Pricing (USD)

QuantityUnit Price
1+ $ 0.42
100+ $ 0.32
1250+ $ 0.28
2500+ $ 0.26
37500+ $ 0.26
50000+ $ 0.26

Technical Specifications

  • Part No.IPD80R4K5P7ATMA1
  • Category Discrete Semiconductor Products
  • Series CoolMOS™
  • Packaging Tape & Reel (TR)
  • Part Status Active
  • FET Type N-Channel
  • Technology MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss) 800V
  • Current - Continuous Drain (Id) @ 25°C 1.5A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On) 10V
  • Vgs(th) (Max) @ Id 3.5V @ 200µA
  • Gate Charge (Qg) (Max) @ Vgs 4nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds 80pF @ 500V
  • Vgs (Max) ±20V
  • FET Feature Super Junction
  • Power Dissipation (Max) 13W (Tc)
  • Rds On (Max) @ Id, Vgs 4.5 Ohm @ 400mA, 10V
  • Operating Temperature -55°C ~ 150°C (TJ)
  • Mounting Type Surface Mount
  • Supplier Device Package TO-252
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