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IPP034NE7N3GXKSA1 Infineon Power MOSFET
The IPP034NE7N3GXKSA1 from Infineon is a 75V OptiMOS™ 3 N-channel power MOSFET optimized for synchronous rectification and high-efficiency switching, delivering 100A continuous current with industry-best 3.4mΩ on-resistance and 117nC gate charge in a TO-220-3 through-hole package. For selection, its 75V blocking, extremely low RDS(on) Qg FOM, and avalanche-rated design prioritize efficiency, paralleling capability, and compact layout with reduced component count and board space. In application, it is the core rectification switch in AC-DC SMPS, 48V Or-ing and circuit-breaker modules, and telecom DC-DC bricks; the motor-drive stage for 12–48V fans, power tools, and e-vehicles; and the output device in class-D audio amplifiers, computing power supplies, and battery-management systems. In stock at HL Electronics – request a quote for fast delivery.
Pricing (USD)
| Quantity | Unit Price |
|---|---|
| 1+ | $ 1.88 |
| 10+ | $ 1.56 |
| 500+ | $ 1.50 |
Technical Specifications
- Part No.IPP034NE7N3GXKSA1
- Series OptiMOS™
- Category Discrete Semiconductor Products > Transistors > FETs, MOSFETs > Single
- FET Type N-Channel
- Packaging Tube
- Vgs (Max) ±20V
- Technology MOSFET (Metal Oxide)
- FET Feature -
- Part Status Active
- Mounting Type Through Hole
- Vgs(th) (Max) @ Id 3.8V @ 155µA
- Operating Temperature -55°C ~ 175°C (TJ)
- Rds On (Max) @ Id, Vgs 3.4 mOhm @ 100A, 10V
- Power Dissipation (Max) 214W (Tc)
- Supplier Device Package PG-TO-220-3
- Gate Charge (Qg) (Max) @ Vgs 117nC @ 10V
- Drain to Source Voltage (Vdss) 75V
- Input Capacitance (Ciss) (Max) @ Vds 8130pF @ 37.5V
- Current - Continuous Drain (Id) @ 25°C 100A (Tc)
- Drive Voltage (Max Rds On, Min Rds On) 10V