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IPW65R041CFD Infineon Power MOSFET
The IPW65R041CFD is a 650V, 68.5A CoolMOS™ N-channel power MOSFET in a TO-247 through-hole package. Its ultra-low 41mΩ on-resistance and 300nC gate charge optimize conduction and switching performance. Ideal for high-efficiency server power supplies, telecom rectifiers, solar inverters, and EV charging systems. The fast body diode enhances reliability in resonant and hard-switching topologies. With 500W power dissipation and –55°C to +150°C operation, it handles demanding industrial conditions. Select this MOSFET when you require top-tier efficiency and thermal performance in high-power, high-voltage designs where every watt counts. In stock at HL Electronics – request a quote for fast delivery.
Pricing (USD)
| Quantity | Unit Price |
|---|---|
| 1+ | $ 2.67 |
| 10+ | $ 2.28 |
| 240+ | $ 2.23 |
Technical Specifications
- Part No.IPW65R041CFD
- Series CoolMOS™
- Category Discrete Semiconductor Products > Transistors > FETs, MOSFETs > Single
- FET Type N-Channel
- Packaging Tube
- Vgs (Max) ±20V
- Technology MOSFET (Metal Oxide)
- FET Feature -
- Part Status Active
- Mounting Type Through Hole
- Vgs(th) (Max) @ Id 4.5V @ 3.3mA
- Operating Temperature -55°C ~ 150°C (TJ)
- Rds On (Max) @ Id, Vgs 41 mOhm @ 33.1A, 10V
- Power Dissipation (Max) 500W (Tc)
- Supplier Device Package PG-TO247-3
- Gate Charge (Qg) (Max) @ Vgs 300nC @ 10V
- Drain to Source Voltage (Vdss) 650V
- Input Capacitance (Ciss) (Max) @ Vds 8400pF @ 100V
- Current - Continuous Drain (Id) @ 25°C 68.5A (Tc)
- Drive Voltage (Max Rds On, Min Rds On) 10V