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IRF1010EPBF - Infineon
Partno：IRF1010EPBFEncapsulation：
Brand：InfineonParticular Year：
Classification：Packing：
Stock：11950SPQ：0
MOQ：1+Delivery Time：In Stock
Unit Price：
$ 0.46546
Total：
$ 0.47
Order Quantity：
-
+
Other Platform Purchase Links： No Data
- PartNoIRF1010EPBF
- Category Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single
- Series HEXFET®
- Packaging Tube
- Part Status Active
- FET Type N-Channel
- Technology MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss) 60V
- Current - Continuous Drain (Id) @ 25°C 84A (Tc)
- Drive Voltage (Max Rds On, Min Rds On) 10V
- Vgs(th) (Max) @ Id 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs 130nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds 3210pF @ 25V
- Vgs (Max) ±20V
- FET Feature -
- Power Dissipation (Max) 200W (Tc)
- Rds On (Max) @ Id, Vgs 12 mOhm @ 50A, 10V
- Operating Temperature -55°C ~ 175°C (TJ)
- Mounting Type Through Hole
- Package / Case TO-220-3