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IRF200P222 - Infineon
Partno：IRF200P222Encapsulation：
Brand：InfineonParticular Year：
Classification：Packing：
Stock：3000SPQ：0
MOQ：1+Delivery Time：In Stock
Unit Price：
$ 2.103857
Total：
$ 2.1
Order Quantity：
-
+
Other Platform Purchase Links： No Data
- PartNoIRF200P222
- Category Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single
- Series StrongIRFET™
- Packaging Tube
- Part Status Active
- FET Type N-Channel
- Technology MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss) 200V
- Current - Continuous Drain (Id) @ 25°C 182A (Tc)
- Drive Voltage (Max Rds On, Min Rds On) 10V
- Vgs(th) (Max) @ Id 4V @ 270µA
- Gate Charge (Qg) (Max) @ Vgs 203nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds 9820pF @ 50V
- Vgs (Max) ±20V
- FET Feature -
- Power Dissipation (Max) 556W (Tc)
- Rds On (Max) @ Id, Vgs 6.6 mOhm @ 82A, 10V
- Operating Temperature -55°C ~ 175°C (TJ)
- Mounting Type Through Hole
- Package / Case TO-247-3