IRF200P222 Infineon Power MOSFET

The IRF200P222 from Infineon is a 200V N-channel StrongIRFET™ power MOSFET in a TO-247AC package, engineered for demanding high-power switching . For selection, its core strengths are a massive 182A continuous drain current and an ultra-low typical on-resistance of 5.3mΩ (6.6mΩ max), which together minimize conduction losses in high-current paths . The 556W power dissipation rating and ruggedized body diode with enhanced dv/dt capability ensure reliability under stressful transitions . Key specs include a 203nC gate charge and 9820pF input capacitance, requiring a capable gate driver . In application, it excels in UPS systems, inverters, half-bridge and full-bridge topologies, and resonant-mode power supplies . It is also ideal for brushed and BLDC motor drives, DC/DC and AC/DC converters, OR-ing switches, and battery-powered circuits, particularly in industrial robots, telecom infrastructure, and power optimizer solutions . In stock at HL Electronics – request a quote for fast delivery.