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IRF3205STRLPBF Infineon Power MOSFET

The 55 V, 110 A N‑channel HEXFET® MOSFET in D2PAK achieves ultra‑low 8 mΩ RDS(on), enabling extremely efficient high‑current switching. Key selection criteria include a 4 V gate‑source threshold, 146 nC gate charge, 200 W power dissipation, and operation from −55 °C to +175 °C. Applications include motor drives, DC‑DC converters, SMPS, inverters, and power management where fast switching speed, low conduction loss, and rugged avalanche‑rated reliability are essential. In stock at HL Electronics – request a quote for fast delivery.

IRF3205STRLPBF - Infineon - main product image
Part No.:IRF3205STRLPBF
Brand:Infineon
Date Code:
Stock:69,370
SPQ:0
MOQ:1+
Delivery Time:In Stock

Pricing (USD)

QuantityUnit Price
1+ $ 0.42
50+ $ 0.33
800+ $ 0.31
16000+ $ 0.31
24000+ $ 0.31

Technical Specifications

  • Part No.IRF3205STRLPBF
  • Series HEXFET®
  • Category Discrete Semiconductor Products > Transistors > FETs, MOSFETs > Single
  • FET Type N-Channel
  • Packaging Tape & Reel (TR)
  • Vgs (Max) ±20V
  • Technology MOSFET (Metal Oxide)
  • FET Feature -
  • Part Status Active
  • Mounting Type Surface Mount
  • Vgs(th) (Max) @ Id 4V @ 250µA
  • Operating Temperature -55°C ~ 175°C (TJ)
  • Rds On (Max) @ Id, Vgs 8 mOhm @ 62A, 10V
  • Power Dissipation (Max) 200W (Tc)
  • Supplier Device Package D2PAK
  • Gate Charge (Qg) (Max) @ Vgs 146nC @ 10V
  • Drain to Source Voltage (Vdss) 55V
  • Input Capacitance (Ciss) (Max) @ Vds 3247pF @ 25V
  • Current - Continuous Drain (Id) @ 25°C 110A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On) 10V
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