IRF3710PBF Infineon Power MOSFET

The IRF3710PBF is a 100V N-Channel HEXFET® power MOSFET in a TO-220AB package, ideal for high-efficiency, high-current switching applications. Select this device when your design demands low 23mΩ on-resistance, 57A continuous drain current, and fast switching capability. It excels in DC-DC converters, solar inverters, motor drives, uninterruptible power supplies (UPS), and power tools. The device is also suitable for automotive and industrial automation applications where 200W power dissipation and a wide -55°C to +175°C operating temperature range are essential . In stock at HL Electronics – request a quote for fast delivery.

IRF3710PBF - Infineon - main product image
Part No.:IRF3710PBF
Brand:Infineon
Date Code:
Stock:158,380
SPQ:0
MOQ:1+
Delivery Time:In Stock

Pricing (USD)

QuantityUnit Price
1+ $ 0.30
50+ $ 0.23
1000+ $ 0.21
20000+ $ 0.21
30000+ $ 0.21

Technical Specifications

  • Part No.IRF3710PBF
  • Series HEXFET®
  • Category Discrete Semiconductor Products > Transistors > FETs, MOSFETs > Single
  • FET Type N-Channel
  • Packaging Tube
  • Vgs (Max) ±20V
  • Technology MOSFET (Metal Oxide)
  • FET Feature -
  • Part Status Active
  • Mounting Type Through Hole
  • Vgs(th) (Max) @ Id 4V @ 250µA
  • Operating Temperature -55°C ~ 175°C (TJ)
  • Rds On (Max) @ Id, Vgs 23 mOhm @ 28A, 10V
  • Power Dissipation (Max) 200W (Tc)
  • Supplier Device Package TO-220AB
  • Gate Charge (Qg) (Max) @ Vgs 130nC @ 10V
  • Drain to Source Voltage (Vdss) 100V
  • Input Capacitance (Ciss) (Max) @ Vds 3130pF @ 25V
  • Current - Continuous Drain (Id) @ 25°C 57A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On) 10V
📧 📋 💬