Partno:IRF3710PBFEncapsulation:
Brand:InfineonParticular Year:
Classification:Packing:
Stock:28386SPQ:0
MOQ:1+Delivery Time:In Stock
Unit Price:
$ 0.297713
Total:
$ 0.3
Order Quantity:
-
+
Other Platform Purchase Links: No Data
- PartNoIRF3710PBF
- Category Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single
- Series HEXFET®
- Packaging Tube
- Part Status Active
- FET Type N-Channel
- Technology MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss) 100V
- Current - Continuous Drain (Id) @ 25°C 57A (Tc)
- Drive Voltage (Max Rds On, Min Rds On) 10V
- Vgs(th) (Max) @ Id 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs 130nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds 3130pF @ 25V
- Vgs (Max) ±20V
- FET Feature -
- Power Dissipation (Max) 200W (Tc)
- Rds On (Max) @ Id, Vgs 23 mOhm @ 28A, 10V
- Operating Temperature -55°C ~ 175°C (TJ)
- Mounting Type Through Hole
- Package / Case TO-220-3
