IRF520NPBF - Infineon
Partno:IRF520NPBFEncapsulation:
Brand:InfineonParticular Year:
Classification:Packing:
Stock:18492SPQ:0
MOQ:1+Delivery Time:In Stock
Unit Price:
$ 0.284112
Total:
$ 0.28
Order Quantity:
-
+
Other Platform Purchase Links: No Data
- PartNoIRF520NPBF
- Category Discrete Semiconductor Products
- Series HEXFET®
- Packaging Tube
- Part Status Active
- FET Type N-Channel
- Technology MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss) 100V
- Current - Continuous Drain (Id) @ 25°C 9.7A (Tc)
- Drive Voltage (Max Rds On, Min Rds On) 10V
- Vgs(th) (Max) @ Id 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs 25nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds 330pF @ 25V
- Vgs (Max) ±20V
- FET Feature -
- Power Dissipation (Max) 48W (Tc)
- Rds On (Max) @ Id, Vgs 200 mOhm @ 5.7A, 10V
- Operating Temperature -55°C ~ 175°C (TJ)
- Mounting Type Through Hole
- Package / Case TO-220-3
