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IRF5210PBF Infineon Power MOSFET
The IRF5210PBF from Infineon is a rugged P-channel HEXFET® power MOSFET, rated for -100V drain-to-source voltage and -40A continuous drain current, with a low 60mΩ max Rds(on) at 10V gate drive. For new designs, select this TO-220AB through-hole MOSFET when you need a high-side switch that simplifies gate drive circuitry in DC-DC converters, load switches, battery protection circuits, or motor H-bridge topologies. Its P-channel nature allows simple low-side gate drive, reducing circuit complexity. Target applications include solar microinverters, industrial power distribution, automotive motor controls, and reverse polarity protection circuits. The 200W power dissipation and -55°C to +175°C junction temperature range suit demanding thermal environments. Evaluate this part when prioritizing simpler drive circuits and rugged linear-mode capability over N-channel efficiency in high-voltage, high-current designs. In stock at HL Electronics – request a quote for fast delivery.
Pricing (USD)
| Quantity | Unit Price |
|---|---|
| 1+ | $ 0.78 |
| 100+ | $ 0.62 |
| 1000+ | $ 0.60 |
| 15000+ | $ 0.59 |
| 30000+ | $ 0.59 |
Technical Specifications
- Part No.IRF5210PBF
- Series HEXFET®
- Category Discrete Semiconductor Products
- FET Type P-Channel
- Packaging Tube
- Vgs (Max) ±20V
- Technology MOSFET (Metal Oxide)
- FET Feature -
- Part Status Active
- Mounting Type Through Hole
- Vgs(th) (Max) @ Id 4V @ 250µA
- Operating Temperature -55°C ~ 175°C (TJ)
- Rds On (Max) @ Id, Vgs 60 mOhm @ 24A, 10V
- Power Dissipation (Max) 200W (Tc)
- Supplier Device Package TO-220AB
- Gate Charge (Qg) (Max) @ Vgs 180nC @ 10V
- Drain to Source Voltage (Vdss) 100V
- Input Capacitance (Ciss) (Max) @ Vds 2700pF @ 25V
- Current - Continuous Drain (Id) @ 25°C 40A (Tc)
- Drive Voltage (Max Rds On, Min Rds On) 10V