IRF5210STRLPBF Infineon Power MOSFET

The IRF5210STRLPBF from Infineon is a rugged P‑channel HEXFET® power MOSFET delivering -100 V drain‑source voltage, -38 A continuous drain current, and a 60 mΩ max RDS(on) at 10 V, all in a surface‑mount D2PAK (TO‑263) package. For selection, a 4 V max gate‑source threshold suits standard 10 V gate‑drive rails, while the 170 W power dissipation at case temperature, ±20 V gate‑source voltage, and −55 °C to +150 °C junction range ensure reliable operation under harsh switching conditions. The fast‑switching characteristic, dynamic dv/dt ruggedness, and repetitive avalanche rating up to Tjmax simplify robust designs in automotive and industrial environments. In application, it excels as a high‑side load switch for battery‑powered systems, motor‑drive inverters, DC‑DC converters, power‑management circuits, and automotive body electronics where a P‑channel solution eliminates the need for charge‑pump gate drive. The compact D2PAK footprint, tape‑and‑reel packaging, and MSL‑1 rating support high‑volume surface‑mount assembly. In stock at HL Electronics – request a quote for fast delivery.