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IRF540NPBF Infineon Power MOSFET
The IRF540NPBF from Infineon is an N-channel HEXFET® power MOSFET delivering 100V breakdown, 33A continuous drain current, and an ultra-low 44mΩ max RDS(on) at 10V for minimal conduction losses. For selection, the 130W power dissipation, ±20V gate-source rating, 4V threshold, and -55°C to +175°C junction range ensure rugged, fast-switching performance with simple gate-drive requirements. In application, it excels in DC-DC converters, switch-mode power supplies, motor drives, inverters, relay and solenoid drivers, LED lighting, audio amplifiers, and industrial automation systems where high-efficiency, reliable medium-power switching is critical. In stock at HL Electronics – request a quote for fast delivery.
Pricing (USD)
| Quantity | Unit Price |
|---|---|
| 1+ | $ 0.20 |
| 50+ | $ 0.15 |
| 1000+ | $ 0.14 |
| 20000+ | $ 0.14 |
| 30000+ | $ 0.14 |
Technical Specifications
- Part No.IRF540NPBF
- Series HEXFET®
- Category Discrete Semiconductor Products
- FET Type N-Channel
- Packaging Tube
- Vgs (Max) ±20V
- Technology MOSFET (Metal Oxide)
- FET Feature -
- Part Status Active
- Mounting Type Through Hole
- Vgs(th) (Max) @ Id 4V @ 250µA
- Operating Temperature -55°C ~ 175°C (TJ)
- Rds On (Max) @ Id, Vgs 44 mOhm @ 16A, 10V
- Power Dissipation (Max) 130W (Tc)
- Supplier Device Package TO-220AB
- Gate Charge (Qg) (Max) @ Vgs 71nC @ 10V
- Drain to Source Voltage (Vdss) 100V
- Input Capacitance (Ciss) (Max) @ Vds 1960pF @ 25V
- Current - Continuous Drain (Id) @ 25°C 33A (Tc)
- Drive Voltage (Max Rds On, Min Rds On) 10V