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IRF7342TRPBF Infineon Discrete Semiconductor Products
The IRF7342TRPBF is a dual P-channel HEXFET® MOSFET in a compact SO-8 package, ideal for space-constrained designs requiring integrated high-side switching or load management. Select this device when your application needs two -55V, -3.4A channels with 105mΩ max on-resistance and 2W power dissipation. Its 20V gate-source voltage rating and low 24nC gate charge simplify drive circuitry. Key applications include power management modules, DC-DC converters, load switches, and battery protection circuits in portable electronics. It also fits well in motor drives for power tools, automotive body electronics, and industrial control systems, with a robust -55°C to +150°C junction range ensuring reliable operation in harsh environments. In stock at HL Electronics – request a quote for fast delivery.
Pricing (USD)
| Quantity | Unit Price |
|---|---|
| 1+ | $ 0.38 |
| 100+ | $ 0.31 |
| 1000+ | $ 0.28 |
| 2000+ | $ 0.26 |
| 4000+ | $ 0.25 |
| 24000+ | $ 0.25 |
| 52000+ | $ 0.24 |
Technical Specifications
- Part No.IRF7342TRPBF
- Category Discrete Semiconductor Products
- Series HEXFET®
- Packaging Tape & Reel (TR)
- Part Status Active
- FET Type 2 P-Channel (Dual)
- FET Feature Logic Level Gate
- Drain to Source Voltage (Vdss) 55V
- Current - Continuous Drain (Id) @ 25°C 3.4A
- Rds On (Max) @ Id, Vgs 105 mOhm @ 3.4A, 10V
- Vgs(th) (Max) @ Id 1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs 38nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds 690pF @ 25V
- Power - Max 2W
- Operating Temperature -55°C ~ 150°C (TJ)
- Mounting Type Surface Mount
- Supplier Device Package 8-SO