IRFB3206PBF Infineon Power MOSFET
The IRFB3206PBF from Infineon is a rugged N-channel HEXFET® power MOSFET designed for high-efficiency, high-current switching applications. For selection, its critical specifications include a 60V drain-source voltage and an impressive 120A continuous drain current at 25°C. The ultra-low on-resistance of just 3mΩ at 10V gate drive minimizes conduction losses, significantly enhancing overall system efficiency. A robust 300W power dissipation rating at the case and ±20V gate voltage tolerance provide substantial design headroom for demanding conditions. In application, it excels as a switching element in high-power DC-DC converters, motor drives for industrial automation and electric power steering, and synchronous rectification in high-efficiency power supplies. Its TO-220AB through-hole package is ideal for applications requiring manual assembly and direct mounting to heatsinks, making it perfect for battery-powered vehicles, forklifts, and uninterruptible power supplies (UPS) where uncompromising reliability and thermal performance are essential. In stock at HL Electronics – request a quote for fast delivery.
Pricing (USD)
| Quantity | Unit Price |
|---|---|
| 1+ | $ 0.49 |
| 100+ | $ 0.39 |
| 1000+ | $ 0.37 |
| 15000+ | $ 0.37 |
| 30000+ | $ 0.37 |
Technical Specifications
- Part No.IRFB3206PBF
- Series HEXFET®
- Category Discrete Semiconductor Products > Transistors > FETs, MOSFETs > Single
- FET Type N-Channel
- Packaging Tube
- Vgs (Max) ±20V
- Technology MOSFET (Metal Oxide)
- FET Feature -
- Part Status Active
- Mounting Type Through Hole
- Vgs(th) (Max) @ Id 4V @ 150µA
- Operating Temperature -55°C ~ 175°C (TJ)
- Rds On (Max) @ Id, Vgs 3 mOhm @ 75A, 10V
- Power Dissipation (Max) 300W (Tc)
- Supplier Device Package TO-220AB
- Gate Charge (Qg) (Max) @ Vgs 170nC @ 10V
- Drain to Source Voltage (Vdss) 60V
- Input Capacitance (Ciss) (Max) @ Vds 6540pF @ 50V
- Current - Continuous Drain (Id) @ 25°C 120A (Tc)
- Drive Voltage (Max Rds On, Min Rds On) 10V
