Partno:IRFB3607PBFEncapsulation:
Brand:InfineonParticular Year:
Classification:Packing:
Stock:6696SPQ:0
MOQ:1+Delivery Time:In Stock
Unit Price:
$ 0.20855
Total:
$ 0.21
Order Quantity:
-
+
Other Platform Purchase Links: No Data
- PartNoIRFB3607PBF
- Category Discrete Semiconductor Products
- Series HEXFET®
- Packaging Tube
- Part Status Active
- FET Type N-Channel
- Technology MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss) 75V
- Current - Continuous Drain (Id) @ 25°C 80A (Tc)
- Drive Voltage (Max Rds On, Min Rds On) 10V
- Vgs(th) (Max) @ Id 4V @ 100µA
- Gate Charge (Qg) (Max) @ Vgs 84nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds 3070pF @ 50V
- Vgs (Max) ±20V
- FET Feature -
- Power Dissipation (Max) 140W (Tc)
- Rds On (Max) @ Id, Vgs 9 mOhm @ 46A, 10V
- Operating Temperature -55°C ~ 175°C (TJ)
- Mounting Type Through Hole
- Package / Case TO-220-3
