> Goods Details Page > IRFB4227PBF

Partno：IRFB4227PBFEncapsulation：

Brand：InfineonParticular Year：

Classification：Packing：

Stock：14678SPQ：0

MOQ：1+Delivery Time：In Stock

Unit Price： $ 0.463949
Total： $ 0.46
Order Quantity： - +
Other Platform Purchase Links： No Data
  • PartNoIRFB4227PBF
  • Category Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single
  • Series HEXFET®
  • Packaging Tube
  • Part Status Active
  • FET Type N-Channel
  • Technology MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss) 200V
  • Current - Continuous Drain (Id) @ 25°C 65A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On) 10V
  • Vgs(th) (Max) @ Id 5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs 98nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds 4600pF @ 25V
  • Vgs (Max) ±30V
  • FET Feature -
  • Power Dissipation (Max) 330W (Tc)
  • Rds On (Max) @ Id, Vgs 24 mOhm @ 46A, 10V
  • Operating Temperature -40°C ~ 175°C (TJ)
  • Mounting Type Through Hole
  • Package / Case TO-220-3