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IRFB4229PBF - Infineon
Partno：IRFB4229PBFEncapsulation：
Brand：InfineonParticular Year：
Classification：Packing：
Stock：3000SPQ：0
MOQ：1+Delivery Time：In Stock
Unit Price：
$ 0.906741
Total：
$ 0.91
Order Quantity：
-
+
Other Platform Purchase Links： No Data
- PartNoIRFB4229PBF
- Category Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Single
- Series HEXFET®
- Packaging Tube
- Part Status Active
- FET Type N-Channel
- Technology MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss) 250V
- Current - Continuous Drain (Id) @ 25°C 46A (Tc)
- Drive Voltage (Max Rds On, Min Rds On) 10V
- Vgs(th) (Max) @ Id 5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs 110nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds 4560pF @ 25V
- Vgs (Max) ±30V
- FET Feature -
- Power Dissipation (Max) 330W (Tc)
- Rds On (Max) @ Id, Vgs 46 mOhm @ 26A, 10V
- Operating Temperature -40°C ~ 175°C (TJ)
- Mounting Type Through Hole
- Package / Case TO-220-3