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IRFB4710PBF Infineon Power MOSFET

IRFB4710PBF - Infineon - main product image
Part No.:IRFB4710PBF
Brand:Infineon
Date Code:
Stock:3,000
SPQ:0
MOQ:1+
Delivery Time:In Stock

Pricing (USD)

QuantityUnit Price
1+ $ 1.53
100+ $ 1.30
1000+ $ 1.25
15000+ $ 1.25
30000+ $ 1.23

Technical Specifications

  • Part No.IRFB4710PBF
  • Series HEXFET®
  • Category Discrete Semiconductor Products
  • FET Type N-Channel
  • Packaging Tube
  • Vgs (Max) ±20V
  • Technology MOSFET (Metal Oxide)
  • FET Feature -
  • Part Status Active
  • Mounting Type Through Hole
  • Vgs(th) (Max) @ Id 5.5V @ 250µA
  • Operating Temperature -55°C ~ 175°C (TJ)
  • Rds On (Max) @ Id, Vgs 14 mOhm @ 45A, 10V
  • Power Dissipation (Max) 3.8W (Ta), 200W (Tc)
  • Supplier Device Package TO-220AB
  • Gate Charge (Qg) (Max) @ Vgs 170nC @ 10V
  • Drain to Source Voltage (Vdss) 100V
  • Input Capacitance (Ciss) (Max) @ Vds 6160pF @ 25V
  • Current - Continuous Drain (Id) @ 25°C 75A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On) 10V
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