IRFH5210TRPBF - Infineon
Partno:IRFH5210TRPBFEncapsulation:
Brand:InfineonParticular Year:
Classification:Packing:
Stock:3985SPQ:0
MOQ:1+Delivery Time:In Stock
Unit Price:
$ 0.589382
Total:
$ 0.59
Order Quantity:
-
+
Other Platform Purchase Links: No Data
- PartNoIRFH5210TRPBF
- Category Discrete Semiconductor Products
- Series HEXFET®
- Packaging Tape & Reel (TR)
- Part Status Active
- FET Type N-Channel
- Technology MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss) 100V
- Current - Continuous Drain (Id) @ 25°C 10A (Ta), 55A (Tc)
- Drive Voltage (Max Rds On, Min Rds On) 10V
- Vgs(th) (Max) @ Id 4V @ 100µA
- Gate Charge (Qg) (Max) @ Vgs 59nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds 2570pF @ 25V
- Vgs (Max) ±20V
- FET Feature -
- Power Dissipation (Max) 3.6W (Ta), 104W (Tc)
- Rds On (Max) @ Id, Vgs 14.9 mOhm @ 33A, 10V
- Operating Temperature -55°C ~ 150°C (TJ)
- Mounting Type Surface Mount
- Package / Case 8-PowerVDFN
