IRFL024NTRPBF Infineon Power MOSFET
The IRFL024NTRPBF from Infineon is an N-channel HEXFET® MOSFET in an SOT-223 package, well-suited for low-power switching and load management. For selection, it combines a 55V drain-to-source breakdown voltage with a 2.8A continuous drain current, plus a low on-resistance of 75mΩ at 10V for efficient conduction. The gate threshold voltage of up to 4V and gate charge of 18.3nC are compatible with standard logic and microcontroller I/O, simplifying drive circuit design. The 1W power dissipation rating and surface-mount package suit compact, automated assembly. In application, it works as a load switch for small motors, solenoids, and relays in industrial control modules, and as a primary switch in low-power DC-DC converters for networking and consumer equipment. It is also suitable for battery protection circuits, LED strip drivers, and power distribution in embedded systems where a small footprint, moderate voltage handling, and straightforward drive requirements are needed. In stock at HL Electronics – request a quote for fast delivery.
Pricing (USD)
| Quantity | Unit Price |
|---|---|
| 1+ | $ 0.35 |
| 100+ | $ 0.27 |
| 1250+ | $ 0.23 |
| 2500+ | $ 0.22 |
Technical Specifications
- Part No.IRFL024NTRPBF
- Series HEXFET®
- Category Discrete Semiconductor Products > Transistors > FETs, MOSFETs > Single
- FET Type N-Channel
- Packaging Tape & Reel (TR)
- Vgs (Max) ±20V
- Technology MOSFET (Metal Oxide)
- FET Feature -
- Part Status Active
- Mounting Type Surface Mount
- Vgs(th) (Max) @ Id 4V @ 250µA
- Operating Temperature -55°C ~ 150°C (TJ)
- Rds On (Max) @ Id, Vgs 75 mOhm @ 2.8A, 10V
- Power Dissipation (Max) 1W (Ta)
- Supplier Device Package SOT-223
- Gate Charge (Qg) (Max) @ Vgs 18.3nC @ 10V
- Drain to Source Voltage (Vdss) 55V
- Input Capacitance (Ciss) (Max) @ Vds 400pF @ 25V
- Current - Continuous Drain (Id) @ 25°C 2.8A (Ta)
- Drive Voltage (Max Rds On, Min Rds On) 10V
