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IRFP064NPBF Infineon Power MOSFET
This is a robust 55V N-channel MOSFET in TO-247AC, designed for high-current switching at up to 110A with an ultra-low 8mΩ on-resistance at 10V, minimizing conduction losses. For selection, key specifications include a 200W power rating, 4V threshold voltage, 170nC gate charge, 4000pF input capacitance, and operation across -55°C to +175°C. The fast switching capability, full avalanche rating, dynamic dv/dt ruggedness, and HEXFET technology ensure a reliable solution for demanding power circuits. In application, it excels in DC-DC converters, switched-mode power supplies and power supply switching and regulation; motor drives for industrial automation and power tools; battery management systems and power distribution; and inverters for renewable energy and UPS systems where efficient, high-power switching is critical. In stock at HL Electronics – request a quote for fast delivery.
Pricing (USD)
| Quantity | Unit Price |
|---|---|
| 1+ | $ 0.57 |
| 50+ | $ 0.45 |
| 400+ | $ 0.42 |
| 8000+ | $ 0.42 |
| 12000+ | $ 0.41 |
Technical Specifications
- Part No.IRFP064NPBF
- Series HEXFET®
- Category Discrete Semiconductor Products > Transistors > FETs, MOSFETs > Single
- FET Type N-Channel
- Packaging Bulk
- Vgs (Max) ±20V
- Technology MOSFET (Metal Oxide)
- FET Feature -
- Part Status Active
- Mounting Type Through Hole
- Vgs(th) (Max) @ Id 4V @ 250µA
- Operating Temperature -55°C ~ 175°C (TJ)
- Rds On (Max) @ Id, Vgs 8 mOhm @ 59A, 10V
- Power Dissipation (Max) 200W (Tc)
- Supplier Device Package TO-247A°C
- Gate Charge (Qg) (Max) @ Vgs 170nC @ 10V
- Drain to Source Voltage (Vdss) 55V
- Input Capacitance (Ciss) (Max) @ Vds 4000pF @ 25V
- Current - Continuous Drain (Id) @ 25°C 110A (Tc)
- Drive Voltage (Max Rds On, Min Rds On) 10V