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IRFP250MPBF Infineon Power MOSFET
The IRFP250MPBF from Infineon Technologies is a robust 200V, 30A N-Channel HEXFET® power MOSFET housed in a TO-247AC through-hole package, offering a low 75mΩ Rds(on) for high-efficiency switching and minimal conduction losses in demanding power circuits. Featuring advanced planar cell technology for a wide safe operating area (SOA) and full avalanche rating for exceptional ruggedness, it operates reliably from -55°C to +175°C with up to 214W power dissipation. Its fast switching, simple gate drive, and ease of paralleling make it an ideal choice for power supplies, DC-DC converters, motor drives, solar inverters, and uninterruptible power supplies (UPS). In stock at HL Electronics – request a quote for fast delivery.
Pricing (USD)
| Quantity | Unit Price |
|---|---|
| 1+ | $ 0.46 |
| 50+ | $ 0.37 |
| 400+ | $ 0.34 |
Technical Specifications
- PartNoIRFP250MPBF
- Category Discrete Semiconductor Products
- Series HEXFET®
- Packaging Tube
- Part Status Active
- FET Type N-Channel
- Technology MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss) 200V
- Current - Continuous Drain (Id) @ 25°C 30A (Tc)
- Drive Voltage (Max Rds On, Min Rds On) 10V
- Vgs(th) (Max) @ Id 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs 123nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds 2159pF @ 25V
- Vgs (Max) ±20V
- FET Feature -
- Power Dissipation (Max) 214W (Tc)
- Rds On (Max) @ Id, Vgs 75 mOhm @ 18A, 10V
- Operating Temperature -55°C ~ 175°C (TJ)
- Mounting Type Through Hole
- Supplier Device Package TO-247A°C