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IRFP250NPBF Infineon Power MOSFET
The IRFP250NPBF from Infineon is a 200V N-channel HEXFET® power MOSFET engineered for high-voltage, high-power switching applications requiring uncompromised efficiency and reliability. For selection, its key advantages include a maximum on-resistance of just 75mΩ at 18A, minimizing conduction losses, and a 30A continuous drain current supporting demanding high-power circuits. The low gate charge of 123nC enables fast, efficient switching. It is 100% avalanche-rated, featuring rugged dynamic dv/dt performance and easy paralleling capability with simple drive requirements. In application, it excels in switch-mode power supplies, DC-DC converters, power factor correction circuits, uninterruptible power supplies, solar inverters, motor control, and industrial welding equipment. Its TO-247AC through-hole package with isolated mounting hole provides superior thermal performance up to 175°C junction temperature. In stock at HL Electronics – request a quote for fast delivery.
Pricing (USD)
| Quantity | Unit Price |
|---|---|
| 1+ | $ 0.44 |
| 50+ | $ 0.36 |
| 400+ | $ 0.33 |
| 8000+ | $ 0.33 |
| 12000+ | $ 0.32 |
Technical Specifications
- Part No.IRFP250NPBF
- Series HEXFET®
- Category Discrete Semiconductor Products
- FET Type N-Channel
- Packaging Bulk
- Vgs (Max) ±20V
- Technology MOSFET (Metal Oxide)
- FET Feature -
- Part Status Active
- Mounting Type Through Hole
- Vgs(th) (Max) @ Id 4V @ 250µA
- Operating Temperature -55°C ~ 175°C (TJ)
- Rds On (Max) @ Id, Vgs 75 mOhm @ 18A, 10V
- Power Dissipation (Max) 214W (Tc)
- Supplier Device Package TO-247A°C
- Gate Charge (Qg) (Max) @ Vgs 123nC @ 10V
- Drain to Source Voltage (Vdss) 200V
- Input Capacitance (Ciss) (Max) @ Vds 2159pF @ 25V
- Current - Continuous Drain (Id) @ 25°C 30A (Tc)
- Drive Voltage (Max Rds On, Min Rds On) 10V