IRFP250PBF VISHAY Power MOSFET

The IRFP250PBF from Vishay is a third‑generation 200V N‑channel HEXFET® power MOSFET bringing together fast switching, rugged device design, and low on‑resistance for cost‑effective high‑power conversion. For selection, key specs include 30 A continuous drain current, 85 mΩ max Rds(on) at 10 V, 140 nC gate charge, 190 W dissipation, and a wide ‑55 °C to +150 °C range; the TO‑247AC package with isolated mounting hole simplifies paralleling and drive while meeting safety creepage requirements. In application, it serves AC‑DC server supplies and laptop adapters, switch‑mode power supplies and DC‑DC converters, motor drives and industrial automation, solar inverters and UPS systems, power‑factor correction stages, and audio amplifiers demanding efficient switching with reduced conduction loss. In stock at HL Electronics – request a quote for fast delivery.

IRFP250PBF - VISHAY - main product image
Part No.:IRFP250PBF
Brand:VISHAY
Date Code:
Stock:30,100
SPQ:0
MOQ:1+
Delivery Time:In Stock

Pricing (USD)

QuantityUnit Price
1+ $ 1.03
10+ $ 0.86
500+ $ 0.83
10000+ $ 0.82
15000+ $ 0.82

Technical Specifications

  • Part No.IRFP250PBF
  • Series -
  • Category Discrete Semiconductor Products > Transistors > FETs, MOSFETs > Single
  • FET Type N-Channel
  • Packaging Tube
  • Vgs (Max) ±20V
  • Technology MOSFET (Metal Oxide)
  • FET Feature -
  • Part Status Active
  • Mounting Type Through Hole
  • Vgs(th) (Max) @ Id 4V @ 250µA
  • Operating Temperature -55°C ~ 150°C (TJ)
  • Rds On (Max) @ Id, Vgs 85 mOhm @ 18A, 10V
  • Power Dissipation (Max) 190W (Tc)
  • Supplier Device Package TO-247-3
  • Gate Charge (Qg) (Max) @ Vgs 140nC @ 10V
  • Drain to Source Voltage (Vdss) 200V
  • Input Capacitance (Ciss) (Max) @ Vds 2800pF @ 25V
  • Current - Continuous Drain (Id) @ 25°C 30A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On) 10V
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