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IRFP4229PBF Infineon Power MOSFET

IRFP4229PBF - Infineon - main product image
Part No.:IRFP4229PBF
Brand:Infineon
Date Code:
Stock:3,000
SPQ:0
MOQ:1+
Delivery Time:In Stock

Pricing (USD)

QuantityUnit Price
1+ $ 1.51
10+ $ 1.26
400+ $ 1.21

Technical Specifications

  • Part No.IRFP4229PBF
  • Series HEXFET®
  • Category Discrete Semiconductor Products > Transistors > FETs, MOSFETs > Single
  • FET Type N-Channel
  • Packaging Tube
  • Vgs (Max) ±30V
  • Technology MOSFET (Metal Oxide)
  • FET Feature -
  • Part Status Active
  • Mounting Type Through Hole
  • Vgs(th) (Max) @ Id 5V @ 250µA
  • Operating Temperature -40°C ~ 175°C (TJ)
  • Rds On (Max) @ Id, Vgs 46 mOhm @ 26A, 10V
  • Power Dissipation (Max) 310W (Tc)
  • Supplier Device Package TO-247A°C
  • Gate Charge (Qg) (Max) @ Vgs 110nC @ 10V
  • Drain to Source Voltage (Vdss) 250V
  • Input Capacitance (Ciss) (Max) @ Vds 4560pF @ 25V
  • Current - Continuous Drain (Id) @ 25°C 44A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On) 10V
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