Partno:IRFP4468PBFEncapsulation:
Brand:InfineonParticular Year:
Classification:Packing:
Stock:3000SPQ:0
MOQ:1+Delivery Time:In Stock
Unit Price:
$ 1.094134
Total:
$ 1.09
Order Quantity:
-
+
Other Platform Purchase Links: No Data
- PartNoIRFP4468PBF
- Category Discrete Semiconductor Products
- Series HEXFET®
- Packaging Tube
- Part Status Active
- FET Type N-Channel
- Technology MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss) 100V
- Current - Continuous Drain (Id) @ 25°C 195A (Tc)
- Drive Voltage (Max Rds On, Min Rds On) 10V
- Vgs(th) (Max) @ Id 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs 540nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds 19860pF @ 50V
- Vgs (Max) ±20V
- FET Feature -
- Power Dissipation (Max) 520W (Tc)
- Rds On (Max) @ Id, Vgs 2.6 mOhm @ 180A, 10V
- Operating Temperature -55°C ~ 175°C (TJ)
- Mounting Type Through Hole
- Package / Case TO-247-3
