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IRFP4468PBF Infineon Power MOSFET

IRFP4468PBF - Infineon - main product image
Part No.:IRFP4468PBF
Brand:Infineon
Date Code:
Stock:3,000
SPQ:0
MOQ:1+
Delivery Time:In Stock

Pricing (USD)

QuantityUnit Price
1+ $ 1.09
10+ $ 0.91
400+ $ 0.88

Technical Specifications

  • Part No.IRFP4468PBF
  • Category Discrete Semiconductor Products
  • Series HEXFET®
  • Packaging Tube
  • Part Status Active
  • FET Type N-Channel
  • Technology MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss) 100V
  • Current - Continuous Drain (Id) @ 25°C 195A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On) 10V
  • Vgs(th) (Max) @ Id 4V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs 540nC @ 10V
  • Input Capacitance (Ciss) (Max) @ Vds 19860pF @ 50V
  • Vgs (Max) ±20V
  • FET Feature -
  • Power Dissipation (Max) 520W (Tc)
  • Rds On (Max) @ Id, Vgs 2.6 mOhm @ 180A, 10V
  • Operating Temperature -55°C ~ 175°C (TJ)
  • Mounting Type Through Hole
  • Supplier Device Package TO-247A°C
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