IRFPE50PBF VISHAY Power MOSFET
The IRFPE50PBF from Vishay is an 800V N-channel power MOSFET built for high-voltage, medium-current switching with exceptional ruggedness. For selection, its key strength is a very high 800V drain-source breakdown voltage, suitable for offline converters operating directly from rectified AC mains. It delivers 7.8A continuous drain current with an on-resistance of 1.2Ω, providing reliable performance in low to medium power applications. The 200nC gate charge and 3100pF input capacitance, combined with a standard 10V gate drive, suit fixed-frequency PWM topologies. Its TO-247-3 package supports high power dissipation up to 190W and features low thermal resistance for effective heatsinking. In application, it excels as the primary-side switch in high-voltage flyback converters for industrial power supplies, auxiliary supplies in telecom equipment, and motor drives in home appliances. It is also ideal for renewable energy inverters and medical imaging equipment where robust high-voltage switching and long-term reliability are critical. In stock at HL Electronics – request a quote for fast delivery.
Pricing (USD)
| Quantity | Unit Price |
|---|---|
| 1+ | $ 1.60 |
| 10+ | $ 1.33 |
| 500+ | $ 1.28 |
| 10000+ | $ 1.27 |
| 15000+ | $ 1.26 |
Technical Specifications
- PartNoIRFPE50PBF
- Series -
- Category Discrete Semiconductor Products > Transistors > FETs, MOSFETs > Single
- FET Type N-Channel
- Packaging Tube
- Vgs (Max) ±20V
- Technology MOSFET (Metal Oxide)
- FET Feature -
- Part Status Active
- Mounting Type Through Hole
- Vgs(th) (Max) @ Id 4V @ 250µA
- Operating Temperature -55°C ~ 150°C (TJ)
- Rds On (Max) @ Id, Vgs 1.2 Ohm @ 4.7A, 10V
- Power Dissipation (Max) 190W (Tc)
- Supplier Device Package TO-247-3
- Gate Charge (Qg) (Max) @ Vgs 200nC @ 10V
- Drain to Source Voltage (Vdss) 800V
- Input Capacitance (Ciss) (Max) @ Vds 3100pF @ 25V
- Current - Continuous Drain (Id) @ 25°C 7.8A (Tc)
- Drive Voltage (Max Rds On, Min Rds On) 10V
