Partno:IRFR120PBFEncapsulation:
Brand:VISHAYParticular Year:
Classification:Packing:
Stock:3000SPQ:0
MOQ:1+Delivery Time:In Stock
Unit Price:
$ 0.435236
Total:
$ 0.44
Order Quantity:
-
+
Other Platform Purchase Links: No Data
- PartNoIRFR120PBF
- Category Discrete Semiconductor Products
- Series -
- Packaging Tube
- Part Status Active
- FET Type N-Channel
- Technology MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss) 100V
- Current - Continuous Drain (Id) @ 25°C 7.7A (Tc)
- Drive Voltage (Max Rds On, Min Rds On) 10V
- Vgs(th) (Max) @ Id 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs 16nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds 360pF @ 25V
- Vgs (Max) ±20V
- FET Feature -
- Power Dissipation (Max) 2.5W (Ta), 42W (Tc)
- Rds On (Max) @ Id, Vgs 270 mOhm @ 4.6A, 10V
- Operating Temperature -55°C ~ 150°C (TJ)
- Mounting Type Surface Mount
- Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
