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IRFR24N15DTRPBF Infineon Power MOSFET
The IRFR24N15DTRPBF from Infineon is a rugged N-channel HEXFET® power MOSFET designed for high-voltage, high-current switching. For selection, its 150V breakdown voltage and 24A continuous drain current at 25°C make it ideal for power supplies operating from rectified AC or industrial DC rails. The 95mΩ maximum on-resistance at 10V gate drive balances conduction efficiency with switching performance, while the robust ±30V gate voltage rating provides extra design margin. Its 45nC total gate charge and low 890pF input capacitance enable fast, low-loss switching. In application, it excels as a primary-side switch in DC-DC converters, telecom power supplies, and motor drive circuits. It's also well-suited for battery management systems, uninterruptible power supplies, and industrial automation equipment. The surface-mount D-Pak package offers a compact footprint with 140W power dissipation capability across a wide -55°C to +175°C junction temperature range. In stock at HL Electronics – request a quote for fast delivery.
Pricing (USD)
| Quantity | Unit Price |
|---|---|
| 1+ | $ 0.51 |
| 100+ | $ 0.42 |
| 1000+ | $ 0.38 |
| 2000+ | $ 0.37 |
| 30000+ | $ 0.37 |
| 40000+ | $ 0.36 |
Technical Specifications
- Part No.IRFR24N15DTRPBF
- Series HEXFET®
- Category Discrete Semiconductor Products
- FET Type N-Channel
- Packaging Tape & Reel (TR)
- Vgs (Max) ±30V
- Technology MOSFET (Metal Oxide)
- FET Feature -
- Part Status Active
- Mounting Type Surface Mount
- Vgs(th) (Max) @ Id 5V @ 250µA
- Operating Temperature -55°C ~ 175°C (TJ)
- Rds On (Max) @ Id, Vgs 95 mOhm @ 14A, 10V
- Power Dissipation (Max) 140W (Tc)
- Supplier Device Package D-Pak
- Gate Charge (Qg) (Max) @ Vgs 45nC @ 10V
- Drain to Source Voltage (Vdss) 150V
- Input Capacitance (Ciss) (Max) @ Vds 890pF @ 25V
- Current - Continuous Drain (Id) @ 25°C 24A (Tc)
- Drive Voltage (Max Rds On, Min Rds On) 10V