IRFR3709ZTRPBF Infineon Power MOSFET
The IRFR3709ZTRPBF from Infineon is a 30V N-channel HEXFET® MOSFET optimized for ultra-low conduction losses in high-current switching applications. For selection, its standout feature is an exceptionally low on-resistance of just 6.5mΩ at 10V, combined with an 86A continuous drain current rating, minimizing power loss and heat generation. The logic-level gate threshold of 2.25V enables direct drive from microcontrollers and low-voltage logic without level shifters. A gate charge of 26nC at 4.5V and 2330pF input capacitance allow fast, efficient switching. The D-Pak surface-mount package handles 79W power dissipation in a compact footprint. In application, it excels as a synchronous rectifier in high-efficiency DC-DC converters for servers and telecom equipment, a load switch in automotive body electronics, and motor drive in battery-powered tools. It is also ideal for power management in notebooks, point-of-load regulators, and VRM modules where minimizing conduction losses and maximizing power density are critical. In stock at HL Electronics – request a quote for fast delivery.
Pricing (USD)
| Quantity | Unit Price |
|---|---|
| 1+ | $ 0.54 |
| 100+ | $ 0.45 |
| 1000+ | $ 0.41 |
| 2000+ | $ 0.39 |
Technical Specifications
- Part No.IRFR3709ZTRPBF
- Series HEXFET®
- Category Discrete Semiconductor Products
- FET Type N-Channel
- Packaging Tape & Reel (TR)
- Vgs (Max) ±20V
- Technology MOSFET (Metal Oxide)
- FET Feature -
- Part Status Active
- Mounting Type Surface Mount
- Vgs(th) (Max) @ Id 2.25V @ 250µA
- Operating Temperature -55°C ~ 175°C (TJ)
- Rds On (Max) @ Id, Vgs 6.5 mOhm @ 15A, 10V
- Power Dissipation (Max) 79W (Tc)
- Supplier Device Package D-Pak
- Gate Charge (Qg) (Max) @ Vgs 26nC @ 4.5V
- Drain to Source Voltage (Vdss) 30V
- Input Capacitance (Ciss) (Max) @ Vds 2330pF @ 15V
- Current - Continuous Drain (Id) @ 25°C 86A (Tc)
- Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
