IRFU9024NPBF Infineon Power MOSFET

The IRFU9024NPBF from Infineon is a P-channel HEXFET power MOSFET rated at -55V, -11A continuous drain current, and a max RDS(on) of 175mΩ at 10V for low conduction losses. For selection, key parameters include a 4V max threshold voltage, 19nC gate charge, 350pF input capacitance, and 38W power dissipation, with rugged operation across -55°C to +150°C. In application, it excels as a high-side load switch in power management circuits, DC-DC converters, portable devices, embedded systems, power inverters, battery-driven equipment, and motor drives where a P-channel solution simplifies gate drive without charge pumps. Its IPAK through-hole package allows efficient heat sinking in compact designs. In stock at HL Electronics – request a quote for fast delivery.

IRFU9024NPBF - Infineon - main product image
Part No.:IRFU9024NPBF
Brand:Infineon
Date Code:
Stock:71,625
SPQ:0
MOQ:1+
Delivery Time:In Stock

Pricing (USD)

QuantityUnit Price
1+ $ 0.24
100+ $ 0.19
750+ $ 0.17
1500+ $ 0.16
3000+ $ 0.15

Technical Specifications

  • Part No.IRFU9024NPBF
  • Series HEXFET®
  • Category Discrete Semiconductor Products > Transistors > FETs, MOSFETs > Single
  • FET Type P-Channel
  • Packaging Tube
  • Vgs (Max) ±20V
  • Technology MOSFET (Metal Oxide)
  • FET Feature -
  • Part Status Active
  • Mounting Type Through Hole
  • Vgs(th) (Max) @ Id 4V @ 250µA
  • Operating Temperature -55°C ~ 150°C (TJ)
  • Rds On (Max) @ Id, Vgs 175 mOhm @ 6.6A, 10V
  • Power Dissipation (Max) 38W (Tc)
  • Supplier Device Package IPAK (TO-251)
  • Gate Charge (Qg) (Max) @ Vgs 19nC @ 10V
  • Drain to Source Voltage (Vdss) 55V
  • Input Capacitance (Ciss) (Max) @ Vds 350pF @ 25V
  • Current - Continuous Drain (Id) @ 25°C 11A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On) 10V
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