IRFU9024NPBF Infineon Power MOSFET
The IRFU9024NPBF from Infineon is a P-channel HEXFET power MOSFET rated at -55V, -11A continuous drain current, and a max RDS(on) of 175mΩ at 10V for low conduction losses. For selection, key parameters include a 4V max threshold voltage, 19nC gate charge, 350pF input capacitance, and 38W power dissipation, with rugged operation across -55°C to +150°C. In application, it excels as a high-side load switch in power management circuits, DC-DC converters, portable devices, embedded systems, power inverters, battery-driven equipment, and motor drives where a P-channel solution simplifies gate drive without charge pumps. Its IPAK through-hole package allows efficient heat sinking in compact designs. In stock at HL Electronics – request a quote for fast delivery.
Pricing (USD)
| Quantity | Unit Price |
|---|---|
| 1+ | $ 0.24 |
| 100+ | $ 0.19 |
| 750+ | $ 0.17 |
| 1500+ | $ 0.16 |
| 3000+ | $ 0.15 |
Technical Specifications
- Part No.IRFU9024NPBF
- Series HEXFET®
- Category Discrete Semiconductor Products > Transistors > FETs, MOSFETs > Single
- FET Type P-Channel
- Packaging Tube
- Vgs (Max) ±20V
- Technology MOSFET (Metal Oxide)
- FET Feature -
- Part Status Active
- Mounting Type Through Hole
- Vgs(th) (Max) @ Id 4V @ 250µA
- Operating Temperature -55°C ~ 150°C (TJ)
- Rds On (Max) @ Id, Vgs 175 mOhm @ 6.6A, 10V
- Power Dissipation (Max) 38W (Tc)
- Supplier Device Package IPAK (TO-251)
- Gate Charge (Qg) (Max) @ Vgs 19nC @ 10V
- Drain to Source Voltage (Vdss) 55V
- Input Capacitance (Ciss) (Max) @ Vds 350pF @ 25V
- Current - Continuous Drain (Id) @ 25°C 11A (Tc)
- Drive Voltage (Max Rds On, Min Rds On) 10V
